DN030S Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

DN030S
NPN Silicon Transistor
Features
• Extremely low collector-to-emitter
saturation voltage
( V_CE(SAT)= 0.1V Typ. @I_C/I_B=100mA/10mA)
• Suitable for low voltage large current drivers
• Complementary pair with DP030S
• Switching Application
Ordering Information
Type NO.
Marking
DN030S
N01 □
①②
① Device Code ② Year&Week Code
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
PIN Connection
3
1
2
SOT-23F
Package Code
SOT-23F
Ratings
15
12
5
300
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
V_CE(sat1)
V_CE(sat2)
V_BE(sat1)
V_BE(sat2)
f_T
C_ob
Test Condition
I_C=50μA, I_E=0
I_C=1mA, I_B=0
I_E=50μA, I_C=0
V_CB=12V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=300mA
I_C=100mA, I_B=10mA
I_C=300mA, I_B=30mA
I_C=100mA, I_B=10mA
I_C=300mA, I_B=30mA
V_CE=5V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
15
-
-
V
12
-
-
V
5
-
-
V
-
-
0.1
μA
-
-
0.1
μA
200
-
450
-
70
-
-
-
-
-
0.2
V
-
-
0.5
V
-
-
1.2
V
-
-
1.7
V
-
300
-
MHz
-
3
-
PF
KSD-T5C008-000
1