BC858 Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor (General purpose application Switching application)

BC858
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
PIN Connection
Features
• High voltage : V_CEO=-30V
• Complementary pair with BC848
Ordering Information
B
E
C
SOT-23
Type NO.
BC858
Marking
Package Code
VA □ □
①② ③
SOT-23
① Device Code ② hFE Rank ③ Year&Week Code
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
-30
-30
-5
-100
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
(Ta=25°C)
Min. Typ. Max. Unit
Collector-Emitter breakdown voltage BV_CEO I_C=-1mA, I_B=0
-30
-
-
V
Base-Emitter turn on voltage
V_BE(ON) V_CE=-5V, I_C=-2mA
-
-
-700 mV
Base-Emitter saturation voltage
V_BE(sat) I_C=-100mA, I_B=-5mA
- -900
-
mV
Collector-Emitter saturation voltage V_CE(sat) I_C=-100mA, I_B=-5mA
-
-
-650 mV
Collector cut-off current
DC current gain
Transition frequency
I_CBO
h_FE^*
f_T
V_CB=-35V, I_E= 0
V_CE=-5V, I_C=-2mA
V_CB=-5V, I_C=-10mA
-
-
-15
nA
110
-
800
-
-
150
-
MHz
Collector output capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
-
Noise Figure
NF
V_CE=-5V, I_C=-200μA,
f=1KHz,Rg=2KΩ, Δf=200Hz
-
* : h_FE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
-
4.5
pF
-
10
dB
KSD-T5C032-000
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