BC817 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN general purpose transistor

BC817
NPN Silicon Transistor
Descriptions
• High current application
• Switching application
PIN Connection
Features
3
1
• Suitable for AF-Driver stage and low power
output stages
2
• Complementary pair with BC807
SOT-23
Ordering Information
Type NO.
BC817
Marking
Package Code
NA □ □
①②③
① Device Code ② hFE Rank ③ Year&Week Code
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
50
35
5
800
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_E=0
Base-Emitter turn on voltage
V_BE(ON) V_CE=1V, I_C=300mA
Collector-Emitter saturation voltage V_CE(sat) I_C=500mA, I_B=50mA
Collector cut-off current
DC current gain
I_CBO
h_FE^*
V_CB=25V, I_E=0
V_CE=1V, I_C=100mA
Transition frequency
f_T
V_CB=5V, I_C=10mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
* : h_FE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
(Ta=25°C)
Min. Typ. Max. Unit
35
-
-
V
-
-
1.2
V
-
-
700 mV
-
-
100 nA
100
-
630
-
-
100
-
MHz
-
16
-
pF
KSD-T5C025-000
1