BC808 Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor (High current application Switching application)

BC808
PNP Silicon Transistor
Descriptions
• High current application
• Switching application
PIN Connection
Features
• Suitable for AF-Driver stage and
low power output stages
• Complementary pair with BC818
B
E
C
SOT-23
Ordering Information
Type NO.
BC808
Marking
Package Code
MA □ □
① ②③
① Device Code ② hFE Rank ③ Year&Week Code
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
-30
-25
-5
-800
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BV_CEO I_C=-1mA, I_B=0
Base-Emitter Turn On voltage
V_BE(ON) V_CE=-1V, I_C=-300mA
Collector-Emitter saturation voltage V_CE(sat) I_C=-500mA, I_B=-50mA
Collector cut-off current
I_CBO
V_CB=-25V, I_E=0
DC current gain
Transition frequency
h_FE^*
f_T
V_CE=-1V, I_C=-100mA
V_CB=-5V, I_E=10mA,
f=100MHz
Collector output capacitance
Cob V_CB=-10V, I_E=0, f=1MHz
* : h_FE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
KSD-T5C024-000
(Ta=25°C)
Min. Typ. Max. Unit
-25
-
-
V
-
-
-1.2
V
-
-
-700 mV
-
-
-100 nA
100
-
630
-
-
100
-
MHz
-
16
-
pF
1