BC807 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP general purpose transistor

BC807
PNP Silicon Transistor
Descriptions
• High current application
• Switching application
PIN Connection
Features
• Suitable for AF-Driver stage and
low power output stages
• Complementary Pair with BC817
B
E
C
SOT-23
Ordering Information
Type NO.
BC807
Marking
LA □ □
①② ③
① Device Code ② hFE Rank ③ Year&Week Code
Package Code0
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
-50
-35
-5
-800
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter
voltage
breakdown _{BVCEO IC=-1mA, IB=0}
Base-Emitter turn on voltage
V_BE(ON) V_CE=-1V, I_C=-300mA
Collector-Emitter saturation voltage V_CE(sat) I_C=-500mA, I_B=-50mA
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
I_CBO
h_FE^*
f_T
C_ob
V_CB=-25V, I_E=0
V_CE=-1V, I_C=-100mA
V_CB=-5V, I_E=10mA
f=100MHz
V_CB=-10V, I_E=0, f=1MHz
* : h_FE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630
(Ta=25°C)
Min. Typ. Max. Unit
-35
-
-
V
-
-
-1.2
V
-
-
-700 mV
-
-
-100 nA
100
-
630
-
-
100
-
MHz
-
16
-
pF
KSD-T5C023-000
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