2SC5345 Datasheet, PDF (1/5 Pages) AUK corp – NPN Silicon Transistor (RF amplifier)

2SC5345
NPN Silicon Transistor
Description
• RF amplifier
Features
• High current transition frequency
f_T=550MHz(Typ.), [V_CE=6V, I_E=-1mA]
• Low output capacitance :
C_ob=1.4pF(Typ.) [V_CB=6V, I_E=0]
• Low base time constant and high gain
• Excellent noise response
Ordering Information
Type NO.
2SC5345
Marking
C5345
PIN Connection
C
B
E
C
B
E
TO-92
Package Code
TO-92
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
30
20
4
20
500
150
-55~150
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=10μA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CEO
BV_EBO
I_C=5mA, I_B=0
I_E=10μA, I_C=0
Collector cut-off current
I_CBO
V_CB=30V, I_E=0
Emitter cut-off current
DC current gain
I_EBO
h_FE*
V_EB=4V, I_C=0
V_CE=6V, I_C=1mA
Collector-Emitter saturation voltage V_CE(sat) I_C=10mA, I_B=1mA
Transition frequency
f_T
V_CE=6V, I_E=-1mA
Collector output capacitance
C_ob
V_CB=6V, I_E=0, f=1MHz
* : h_FE rank / R : 40~80, O : 70~140, Y : 120~240
Ta=25°C
Min. Typ. Max. Unit
30
-
-
V
20
-
-
V
4
-
-
V
-
-
0.5
μA
-
-
0.5
μA
40
-
240
-
-
-
0.3
V
-
550
-
MHz
-
1.4
-
pF
KSD-T0A020-001
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