2SC5344S Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor (Audio power amplifier application)

2SC5344S
NPN Silicon Transistor
Description
• Audio power amplifier application
Features
• High h_FE : h_FE=100~320
• Complementary pair with 2SA1981S
Ordering Information
Type No.
Marking
Package Code
2SC5344S
FA □ □
①② ③
SOT-23
①Device Code ② hFE Rank ③ Year&Week Code
PIN Connection
B
E
C
SOT-23
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-Base voltage
Collector current
V_EBO
I_C
Collector dissipation
P_C*
Junction temperature
T_j
Storage temperature
T_stg
* Package mounted on 99.5% alumina 10×8×0.6mm
Ratings
35
30
5
800
350
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=100μA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CEO
BV_EBO
I_C=1mA, I_B=0
I_E=10μA, I_C=0
Collector cut-off current
I_CBO
V_CB=35V, I_E=0
Emitter cut-off current
DC current gain
I_EBO
h_FE^*
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
Collector-Emitter saturation voltage V_CE(sat) I_C=500mA, I_B=50mA
Transition frequency
f_T
V_CE=5V, I_C=10mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
* : h_FE rank / O : 100 ~ 200, Y : 160 ~ 320
(Ta=25°C)
Min. Typ. Max. Unit
35
-
-
V
30
-
-
V
5
-
-
V
-
-
0.1
μA
-
-
0.1
μA
100
-
320
-
-
-
0.5
V
-
120
-
MHz
-
13
-
pF
KSD-T5C036-000
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