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2SA1980M Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor (General small signal amplifier)
2SA1980M
PNP Silicon Transistor
Description
• General small signal amplifier
Features
• Low collector saturation voltage :
VCE(sat)=-0.3V(Max.)
• Low output capacitance : Cob=4pF(Typ.)
• Complementary pair with 2SC5343M
Ordering Information
Type NO.
2SA1980M
Marking
1980
PIN Connection
E
C
B
TO-92M
Package Code
TO-92M
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
-50
-50
-5
-150
400
150
-55~150
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BVCBO IC=-100μA, IE=0
Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0
Emitter-Base breakdown voltage
BVEBO IE=-10μA, IC=0
Collector cut-off current
ICBO
VCB=-50V, IE=0
Emitter cut-off current
DC current gain
IEBO
hFE*
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
Collector-Emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA
Transition frequency
fT
VCE=-10V, IC=-1mA
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Noise figure
NF
VCE=-6V, IC=-0.1mA
f=1KHz, Rg=10KΩ
*: hFE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700
KSD-R0B047-000
Ta=25°C
Min. Typ. Max. Unit
-50
-
-
V
-50
-
-
V
-5
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
70
-
700
-
-
-
-0.3
V
80
-
-
MHz
-
4
7
pF
-
-
10
dB
1