2SA1980E Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor (General small signal amplifier)

2SA1980E
PNP Silicon Transistor
Description
• General small signal amplifier
PIN Connection
Features
• Low collector saturation voltage : V_CE(sat)=-0.3V(Max.)
• Low output capacitance : C_ob=4pF(Typ.)
• Complementary pair with 2SC5343E
1
2
3
SOT-523
Ordering Information
Type NO.
2SA1980E
Marking
A
①② ③
①Device Code ②hFE Rank ③Year&Week Code
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Package Code
SOT-523
Ratings
-50
-50
-5
-150
150
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=-100μA, I_E=0
Collector-Emitter breakdown voltage BV_CEO I_C=-1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=-10μA, I_C=0
Collector cut-off current
I_CBO
V_CB=-50V, I_E=0
Emitter cut-off current
DC current gain
I_EBO
h_FE*
V_EB=-5V, I_C=0
V_CE=-6V, I_C=-2mA
Collector-Emitter saturation voltage
V_CE(sat) I_C=-100mA, I_B=-10mA
Transition frequency
f_T
V_CE=-10V, I_C=-1mA
Collector output capacitance
Noise figure
C_ob
V_CB=-10V, I_E=0, f=1MHz
NF
V_CE=-6V, I_C=-0.1mA
f=1KHz, Rg=10KΩ
*: h_FE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700
KSD-T5E007-000
(Ta=25°C)
Min. Typ. Max. Unit
-50
-
-
V
-50
-
-
V
-5
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
70
-
700
-
-
-
-0.3
V
80
-
-
MHz
-
4
7
pF
-
-
10
dB
1