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2SA1980 Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor (General small signal amplifier)
2SA1980
PNP Silicon Transistor
Description
• General small signal amplifier
Features
• Low collector saturation voltage
: VCE(sat)=-0.3V(Max.)
• Low output capacitance : Cob=4pF(Typ.)
• Complementary pair with 2SC5343
Ordering Information
Type NO.
2SA1980
Marking
A1980
PIN Connection
E
B
E
C
B
C
TO-92
Package Code
TO-92
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-50
-50
-5
-150
500
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-base breakdown voltage
BVCBO IC=-100μA, IE=0
Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0
Emitter-base breakdown voltage
BVEBO IE=-10μA, IC=0
Collector cut-off current
ICBO
VCB=-50V, IE=0
Emitter cut-off current
DC current gain
IEBO
hFE*
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
Transition frequency
fT
VCE=-10V, IC=-1mA
Collector output capacitance
Noise figure
Cob
VCB=-10V, IE=0, f=1MHz
NF
VCE=-6V, IC=-0.1mA
f=1KHz, Rg=10KΩ
*: hFE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700.
KSD-T0A016-001
(Ta=25°C)
Min. Typ. Max. Unit
-50
-
-
V
-50
-
-
V
-5
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
70
-
700
-
-
-
-0.3
V
80
-
-
MHz
-
4
7
pF
-
-
10
dB
1