2N7002B Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – N-CHannel Enhancement Mode MOSFET

2N7002B
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
 ESD rating: 2000V (HBM)
 Low On-Resistance: R_DS(on) < 3Ω @ V_GS = 10V
 High power and current handling capability
 Very fast switching
 RoHS compliant device
Applications
 High speed line driver
SOT-23
Ordering Information
Part Number
Marking Code
Package
Packaging
2N7002B
7B2 □
SOT-23
Tape & Reel
Marking Information
7B2 □
7B2 = Specific Device Code
□ = Year & Week Code Marking
Absolute Maximum Ratings (T_amb=25℃, Unless otherwise specified)
Characteristic
Symbol
Drain-Source voltage
Gate-Source voltage
Maximum drain current ^{(Note 1)}
Pulsed drain current ^{(Note 1)}
Power dissipation ^{(Note 2)}
Operating junction temperature
Storage temperature range
Thermal resistance junction to ambient ^{(Note 2)}
V_DS
V_GS
I_D
I_DP
P_D
T_j
T_stg
R_th(j-a)
Note 1) _{Limited only maximum junction temperature}
Note 2) _{Device mounted on FR-4 board with recommended pad layout.}
Rev. date: 11-JAN-13
KSD-T5C100-001
Ratings
60
20
300
800
350
150
-55 ~ 150
350
Unit
V
V
mA
mA
mW
C
C
C/W
www.auk.co.kr
1 of 6