2N7000K Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N Channel MOSFET ESD Protected 2000V

2N7000K
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
 ESD rating: 1000V (HBM)
 Low On-Resistance: R_DS(on) < 3Ω @ V_GS = 10V
 High power and current handling capability
 Very fast switching
 Halogen free and RoHS compliant device
Applications
 High speed line driver
SGD
TO-92
Ordering Information
Part Number
Marking Code
Package
Packaging
2N7000K
2N7000K
TO-92
Tape
Marking Information
2N
7000K
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code(year,week)
Absolute Maximum Ratings (T_amb=25℃, Unless otherwise specified)
Characteristic
Symbol
Drain-Source voltage
Gate-Source voltage
Maximum drain current ^{(Note 1)}
Pulsed drain current ^{(Note 1)}
Power dissipation ^{(Note 2)}
Operating junction temperature
Storage temperature range
Thermal resistance junction to ambient ^{(Note 2)}
V_DS
V_GS
I_D
I_DP
P_D
T_j
T_stg
R_th(j-a)
Note 1) _{Limited only maximum junction temperature}
Note 2) _{Device mounted on FR-4 board with recommended pad layout.}
Rev. date: 28-MAR-12
KSD-T0A074-000
Ratings
60
20
500
2
625
150
-55 ~ 150
400
Unit
V
V
mA
A
mW
C
C
C/W
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