KBU801 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – Single Phase 8.0 AMPS. Silicon Bridge Rectifiers

KI SEMICONDUCTOR
KBU801
THRU
KBU807
Features
• Low Forward Voltage Drop
• Ideal For Printer Circuit Boards
• High Current Capability and High Reliability
• High Surge Current Capability
Maximum Ratings
• Operating Temperature: -50°C to +150°C
• Storage Temperature: -50°C to +150°C
Catalog
Number
Device
Marking
KBU801
KBU802
KBU803
KBU804
KBU805
KBU806
KBU807
KBU8A
KBU8B
KBU8D
KBU8G
KBU8J
KBU8K
KBU8M
Maximum
Reccurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
8 Amp Single Phase
Bridge Rectifier
50 to 1000 Volts
KBU
A
D
E
C
B
-
AC
+
F
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current (NOTE 1,2 )
I_F(AV)
8 A Tc = 100°C
Peak Forward Surge
I_FSM
Current
200A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
Maximum DC
V_F
1.0V
T_C = 25°C
Reverse Current At
Rated DC Blocking
Voltage
I_R
10 µA T_C = 25°C
300mA T_C = 100°C
*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%
G
J
K
L
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.895
.935
B
.600
.700
C
.740 .780
D
.15∅ x .23L
E
---
.300
F
.100
--
G
.048
.052
J
.268
.280
K
---
.140
L
.180
.220
MM
MIN
22.7
16.8
18.8
3.8∅ x
---
25.4
1.2
6.8
---
4.6
MAX
23.7
17.8
19.8
5.7L
7.5
---
1.3
7.1
5.3
5.6
NOTE
NOM
HOLE
NOM
NOM
3PL
KI SEMICONDUCTOR