H945 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

K I SEMICONDUCTOR
PNP S I L I C O N T R A N S I S T O R
C945
█ APPLICATIONS
The H945 is designed for driver stage of AF amplifier
And low speed switching.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………250mW
V_CBO——Collector-Base Voltage………………………………60V
V_CEO——Collector-Emitter Voltage……………………………50V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current……………………………………150mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
60
V I_C=100μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
50
V I_C=100μA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E=100μA，I_C=0
HFE DC Current Gain
90
600
V_CE=6V, I_C=1mA
VCE(sat) Collector- Emitter Saturation Voltage
0.3 V I_C=100mA, I_B=10mA
VBE(sat) Base-Emitter Saturation Voltage
1.0 V I_C=100mA, I_B=10mA
ICBO Collector Cut-off Current
100 nA V_CB=60V, I_E=0
IEBO Emitter Cut-off Current
100 nA V_EB=5V, I_C=0
fT
Current Gain-Bandwidth Product
250
MHz V_CE=6V, I_C=10mA
Cob Output Capacitance
3.0
pF V_CB=6V, I_E=0，f=1MHz
NF Noise Figure
4.0
dB
VCE=6V,IC=0.5mA，f=1KHz，
Rs=500Ω
█ hFE Classification
R
90—180
Q
135—270
P
200—400
K
300—600