H3203 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

K I SEMICONDUCTOR
NPN S I L I C O N T R A N S I S T O R
C3203
█ APPLICATIONS
HIGH CURRENT APPLICATIONS.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………600mW
V_CBO——Collector-Base Voltage………………………………35V
V_CEO——Collector-Emitter Voltage……………………………30V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current……………………………………800mA
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
35
V I_C=100μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
30
V I_C=10mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E=1mA，I_C=0
HFE（1） DC Current Gain
100
320
V_CE=1V, I_C=100mA
HFE（2） DC Current Gain
35
V_CE=1V, I_C=700mA
VCE(sat) Collector- Emitter Saturation Voltage
0.5 V I_C=500mA, I_B=20mA
VBE Base-Emitter Voltage
05
0.8 V V_CE=1V, I_C=10mA
ICBO Collector Cut-off Current
100 nA V_CB=35V, I_E=0
IEBO Emitter Cut-off Current
100 nA V_EB=5V, I_C=0
fT
Current Gain-Bandwidth Product
120
MHz V_CE=5V, I_C=10mA
Cob Output Capacitance
13
pF V_CB=10V, I_E=0，f=1MHz
█ HFE Classification
O
100—200
Y
160—320