H3198 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

K I SEMICONDUCTOR.
NPN S I L I C O N T R A N S I S T O R
C3198
█ APPLICATIONS
General Purpose And Switching Applications.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………400mW
V_CBO——Collector-Base Voltage………………………………60V
V_CEO——Collector-Emitter Voltage……………………………50V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current………………………………………150mA
Ib——Base Current………………………………………………50mA
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
100 nA V_CB=60V, I_E=0
IEBO Emitter Cut-off Current
100 nA V_EB=5V, I_C=0
HFE(1) DC Current Gain
70
700
V_CE=6V, I_C=2mA
HFE(2) DC Current Gain
25 100
V_CE=6V, I_C=150mA
VCE(sat) Collector- Emitter Saturation Voltage
0.1 0.25 V I_C=100mA, I_B=10mA
VBE(sat) Base-Emitter Saturation Voltage
1.0 V I_C=100mA, I_B=10mA
fT
Current Gain-Bandwidth Product
80
MHz V_CE=10V, I_C=1mA
Cob Output Capacitance
NF Noise Figure
2.0 3.5 pF V_CB=10V, I_E=0，f=1MHz
1.0
10
dB
V_CE=6V, I_C=100μA
f=1KHz,Rg=10KΩ
█ hFE Classification
O
70—140
Y
120—240
GR
200—400
BL
350—700