H2222A Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTOR

K I SEMICONDUCTOR
NPN S I L I C O N T R A N S I S T O R
N2222A
█ APPLICATIONS
General Purpose Transistors.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………625mW
V_CBO——Collector-Base Voltage………………………………75V
V_CEO——Collector-Emitter Voltage……………………………40V
V_EBO——Emitter-Base Voltage………………………………6V
I_C——Collector Current……………………………………600mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
75
BVCEO Collector-Emitter Breakdown Voltage
40
BVEBO Emitter-Base Breakdown Voltage
6
HFE DC Current Gain
100
VCE(sat) Collector- Emitter Saturation Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
300
Cob Output Capacitance
V I_C=10μA, I_E=0
V I_C=10mA, I_B=0
V I_E=10μA，I_C=0
400
V_CE=10V, I_C=150mA
0.3 V I_C=150mA, I_B=15mA
10 nA V_CB=60V, I_E=0
10 nA V_EB=3V, I_C=0
MHz V_CE=20V, I_C=20mA
8 pF V_CB=10V, I_E=0，f=1MHz