H1815 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

K I SEMICONDUCTOR
NPN SILICON TRANSISTOR
C1815
█ AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
TO-92
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………400mW
V_CBO——Collector-Base Voltage………………………………60V
V_CEO——Collector-Emitter Voltage……………………………50V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current……………………………………150mA
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
1―Emitter，E
2―Collector，C
3―Base，B
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
70
25
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
60
Collector-Emitter Breakdown Voltage
50
Emitter-Base Breakdown Voltage
5
Current Gain-Bandwidth Product
80
100 nA
V_CB=60V, I_E=0
100 nA
V_EB=5V, I_C=0
700
V_CE=6V, I_C=2mA
V_CE=6V, I_C=150mA
250 mV I_C=100mA, I_B=10mA
1.0 V I_C=100mA, I_B=10mA
V I_C=100μA, I_E=0
V I_C=1mA, I_B=0
V
I_E=100μA，I_C=0
MHz V_CE=10V, I_C=1mA
█ hFE Classification
O
70—140
Y
120—240
GR
200—400
BL
350—700