H1008 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

K I SEMICONDUCTOR
NPN S I L I C O N T R A N S I S T O
R
C1008
█ LOW FREQUENCY AMPLIFIER MEDIUM
SPEED SWITCHING
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………800mW
V_CBO——Collector-Base Voltage………………………………80V
V_CEO——Collector-Emitter Voltage……………………………60V
V_EBO——Emitter-Base Voltage………………………………8V
I_C——Collector Current……………………………………700mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
ICBO
IEBO
HFE(1)
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Cob
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Current Gain-Bandwidth Product
Output Capacitance
█ hFE Classification
Min Typ Max Unit
Test Conditions
100 nA V_CB=60V, I_E=0
100 nA V_EB=5V, I_C=0
40
400
V_CE=2V, I_C=50mA
0.2 0.4 V I_C=500mA, I_B=50mA
0.86 1.1 V I_C=500mA, I_B=50mA
80
V I_C=100μA, I_E=0
60
V I_C=10mA, I_B=0
8
V I_E=10μA，I_C=0
30 50
MHz V_CE=10V, I_C=50mA
8
pF V_CB=10V, I_E=0，f=1MHz
R
40—80
O
70—140
Y
120—240
GR
240—400