BAT41 Datasheet, PDF (1/4 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

KI SEMICONDUCTOR.CO
SMALL SIGNAL SCHOTTKY DIODE
BAT 41
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS (limiting values)
Symbol
V_RRM
IF
I_FRM
I_FSM
Ptot
Tstg
T_j
T_L
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Repetitive Peak Forward Current*
Surge non Repetitive Forward Current*
Power Dissipation*
Storage and Junction Temperature Range
T_a = 25 °C
t_p ≤ 1s
δ ≤ 0.5
t_p ≤ 10ms
T_a = 95°C
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
THERMAL RESISTANCE
Symbol
Rth(j-a)
Junction-ambient*
Test Conditions
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V_BR
V_F * *
I_R * *
T_j = 25°C
Tj = 25°C
T_j = 25°C
T_j = 25°C
T_j = 100°C
Test Conditions
I_R = 100µA
IF = 1mA
I_F = 200mA
DYNAMIC CHARACTERISTICS
Symbol
C
T_j = 25°C
Test Conditions
V_R = 1V
* On infinite heatsink with 4mm lead length
* * Pulse test: tp ≤ 300µs δ < 2%.
1
V_R = 50V
f = 1MHz
DO 35
(Glass)
Value
Unit
100
V
100
mA
350
mA
750
mA
100
mW
- 65 to +150
°C
- 65 to +125
°C
230
°C
Value
300
Unit
°C/W
Min. Typ. Max. Unit
100
V
0.4 0.45
V
1
0.1
µA
20
Min. Typ. Max. Unit
2
pF