BAS40W Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

KI SEMICONDUCTOR CO.
SOT-323 Plastic-Encapsulate Diodes
BAS40W series
SCHOTTKY DIODE
FEATURES
z Low forward voltage
z Fast switching
SOT-323
BAS40W MARKING:43h
BAS40W-04 MARKING: 44 BAS40W-05 MARKING: 45 BAS40W-06 MARKING: 46
Maximum Ratings @T_A=25
Parameter
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Power Dissipation
Storage temperature
Symbol
V_RRM
V_RWM
V_R
I_FM
Pd
T_STG
Limits
40
200
200
-55-150
Electrical Characteristics@T_A=25℃
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Diode Capacitance
Symbol
V _(BR)R
V_F1
V_F2
I_R
C_D
Min.
40
Typ.
Max. Unit
V
0.38
V
1
V
0.2
µA
5
pF
Reverse Recovery Time
t_rr
5
nS
Unit
V
mA
mW
℃
Conditions
IR=10µA
I_F=1mA
I_F=40mA
V_R=30V
V_R=0,f=1MHz
I_F=I_R=10mA
Irr=0.1XI_R,R_L=100Ω
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