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| BAS21A Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES | |||
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KI SEMICONDUCTOR CO.
SOT-23 Plastic-Encapsulate Diodes
BAS21_A_C_S LT1
SWITCHING DIODE
FEATURES
SOT-23
Power dissipation
PD:
225 mW (Tamb=25â)
Forward Current
IF:
Reverse Voltage
200 m A
VR:
250 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
2. 4
1. 3
Unit: mm
BAS21LT1
Marking: JS
BAS21ALT1
Marking: JS2
BAS21CLT1
Marking: JS3
BAS21SLT1
Marking: JS4
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V(BR)
IR
VF
CD
Test conditions
IR= 100µA
VR=200V
IF=100mA
IF=200mA
VR=0V, f=1MHz
MIN
MAX
250
1
1000
1250
5
Reverse recovery time
t rr
50
UNIT
V
µA
mV
pF
nS
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