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| BAS16LT1 Datasheet, PDF (1/1 Pages) Motorola, Inc – CASE 31808, STYLE 8 SOT23 (TO236AB) | |||
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KI SEMICONDUCTOR CO.
SOT-23 Plastic-Encapsulate Diodes
SWITCHING DIODE
BAS16LT1
FEATURES
SOT-23
Power dissipation
PD:
225 mW (Tamb=25â)
Forward Current
IF:
200 m A
Reverse Voltage
2. 4
1. 3
VR:
75 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
Unit: mm
Marking A6
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=75V
MIN
MAX
75
1
UNIT
V
µA
Forward voltage
Diode capacitance
Reverse recovery time
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
CD
VR=0V, f=1MHz
t rr
715
855
mV
1000
1250
2
pF
6
nS
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