1SS81 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for High Voltage Switching

KI SEMICONDUCTOR CO.
SMALL SIGNAL SWITCHING DIODE
1SS81
REVERSE VOLTAGE: 150 V
CURRENT: 200 mA
FEATURES
Glass sealed envelope. (MSD)
High reliability
DO - 35(GLASS)
MECHANICAL DATA
Polarity: Color band denotes cathode
Weight: 0.005 ounces, 0.14 grams
Case: DO-35, glass case
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at ₂₅ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resis tive or inductive load. For capacitive load,derate by 20%.
Reverse voltage
Peak reverse voltage (NOTE 1)
Power dissipation
Peak forward current
Non-Repetitive peak forw ard surge current
(NOTE2)
Average forward current
V_R
V_RM
Pd
IFM
I_FSM
Io
Maximum instantaneous forw ard voltage
@I_F =100mA
V_F
Maximum reverse current
@V _R=1 5 0 V
at rated DC blocking voltage @V_R=200V
I_R
Capacitance @V_R=0V,f=1MHz
CJ
Reverse recovery time
t_rr
@I_F=I_R=30mA,Irr=3mA,RL=100
Junction temperature
T_J
Storage temperature range
T_STG
Notes:1.Reverse voltae in excess of peak reverse voltage may deteriorate electrical characteristic.
2.Within 1s forward surge current.
1
1SS81
150
200
400
625
1.0
200
1.0
0.2
100
1.5
100
175
- 65 ---- + 175
UNITS
V
V
mW
mA
A
mA
V
μA
pF
ns