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| 1SS196 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | |||
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KI SEMICONDUCTOR CO.
SOT-23 Plastic-Encapsulate Diodes
1SS196
SWITCHING DIODE
FEATURES
SOT-23
Power dissipation
PD : 150 mW(Tamb=25â)
Forward Current
IF : 100 m A
Reverse Voltage
VR:
80 V
Operating and storage junction temperature range
TJ,Tstg: -55â to +150â
2. 4
1. 3
Unit: mm
Marking G3
ELECTRICAL CHARACTERISTICS(Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
Test conditions
V(BR)
IR= 100µA
IR
VR=80V
MIN
MAX
80
0.5
Forward voltage
VF
IF=100mA
1.2
Diode capacitance
CD
VR=0V f=1MHz
4
Reverse recovery time
t rr
4
UNIT
V
µA
V
pF
nS
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