1SS181 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

KI SEMICONDUCTOR CO.
SOT-23 Plastic-Encapsulate Diodes
1SS181
SWITCHING DIODE
FEATURES
SOT-23
Power dissipation
P_D : 150 mW(Tamb=25℃)
Forward Current
I_F : 100 m A
Reverse Voltage
V_R:
80 V
Operating and storage junction temperature range
T_J,T_stg: -55℃ to +150℃
2. 4
1. 3
Unit: mm
Marking A3
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
CD
t rr
Test conditions
IR= 100µA
VR=80V
IF=100mA
VR=0V f=1MHz
MIN
MAX
80
0.5
1.2
4
4
UNIT
V
µA
V
pF
nS