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1N5391 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes)
KI SEMICONDUCTOR
PLASTIC SILICON RECTIFIER
1N5391 - - - 1N5399
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces0.39 grams
Mounting position: Any
DO - 15
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.
1N
5391
1N
5392
1N
5393
1N
5394
1N
5395
1N
5396
1N
5397
1N
5398
1N
5399
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 1.5 A
VRRM 50 100 200 300 400 500 600 800 1000 V
VRMS 35 70 140 210 280 350 420 560 700
V
VDC 50 100 200 300 400 500 600 800 1000 V
IF(AV)
1.5
A
IFSM
50.0
A
VF
1.1
V
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=100
5.0
50.0
A
Typical junction capacitance (Note1)
CJ
20
pF
Typical thermal resistance
(Note2)
RθJA
40
/W
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
TSTG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
- 55 ---- + 150
Document Number 0260004
1.