MMBTSC945 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC945
NPN Silicon Epitaxial Planar
Transistors
For switching and AF amplifier applications
The transistor is subdivided into four groups O, Y, P and L,
according to its DC current gain. As complementary type the
PHP transistor MMBTSA733 is recommended.
1.Base 2.Emitter 3.Collector
Absolute Maximum Ratings (Ta = 25℃)
SOT-23 Plastic Package
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Ts
VALUE
60
50
5
150
200
150
- 55 to + 150
UNIT
V
V
V
mA
mW
℃
℃
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at VCE = 6 V, IC = 1 mA
Current Gain Group O
Y
P
L
Collector Base Cutoff Current
at VCB = 40 V
Emitter Base Cutoff Current
at VEB = 3 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
Gain Bandwidth Product
at VCE = 6 V, IC = 10 mA
Output Capacitance
at VCB = 6 V, f = 1 MHz
SYMBOL
hFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
fT
COB
MIN.
70
120
200
350
-
-
60
50
5
-
-
-
TYP.
-
-
-
-
-
-
-
300
2.5
MAX.
140
240
400
700
0.1
0.1
-
-
-
0.3
-
-
UNIT
-
µA
µA
V
V
V
V
MHz
pF
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