MMBT9014 Datasheet, PDF (1/2 Pages) Unisonic Technologies – PRE-AMPLIFIER, LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR

MMBT9014
NPN Silicon Epitaxial Planar
Transistors
For switching and AF amplifier applications
As complementary types the PNP transistors
MMBT9015 is recommended.
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Ts
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at VCE = 5 V, IC = 1 mA
MMBT9014B
MMBT9014C
MMBT9014D
Collector Cutoff Current
at VCB = 50 V
Emitter Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 5 mA
Base Emitter Saturation Voltage
at IC = 100 mA, IB = 5 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA
Output Capacitance
at VCB = 10 V, f = 1 MHz
Noise Figure
at VCE = 5 V, IC = 200 µA, f = 1 KHz, RG = 2 KΩ
SYMBOL
hFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
V_CE(sat)
VBE(sat)
fT
COB
NF
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
VALUE
50
45
5
100
200
150
- 55 to + 150
UNIT
V
V
V
mA
mW
℃
℃
MIN.
110
200
420
-
-
50
45
5
-
-
100
-
-
MAX.
220
450
800
50
50
-
-
-
0.6
1
-
6
10
UNIT
-
nA
nA
V
V
V
V
V
MHz
pF
dB
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