MMBT9013 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION

MMBT9013
NPN Silicon Epitaxial Planar
Transistors
For switching and amplifier applications
As complementary types the PNP transistors
MMBT9012 is recommended.
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
VALUE
40
30
5
500
200
150
- 55 to + 150
UNIT
V
V
V
mA
mW
℃
℃
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at VCE = 1 V, IC = 50 mA
Current Gain Group G
H
at VCE = 1 V, IC = 500 mA
Collector Base Cutoff Current
at VCB = 35 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Voltage
at VCE = 1 V, IC = 100 mA
Gain Bandwidth Product
at VCE = 6 V, IC = 20 mA
SYMBOL
hFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
VBE
fT
MIN.
100
160
40
-
-
40
30
5
-
-
-
100
MAX.
250
400
-
100
100
-
-
-
0.6
1.2
1
-
UNIT
-
nA
nA
V
V
V
V
V
V
MHz
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