MMBT9012 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION

MMBT9012
PNP Silicon Epitaxial Planar
Transistors
For switching and amplifier applications
As complementary types the NPN transistors
MMBT9013 is recommended.
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Tstg
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
VALUE
40
30
5
500
200
150
- 55 to + 150
UNIT
V
V
V
mA
mW
℃
℃
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at -VCE = 1 V, -IC = 50 mA
Current Gain Group G
H
at -VCE = 1 V, -IC = 500 mA
Collector Base Cutoff Current
at -VCB = 35 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter Voltage
at -VCE = 1 V, -IC = 100 mA
Gain Bandwidth Product
at -VCE = 6 V, -IC = 20 mA
SYMBOL
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
-VBE
fT
MIN.
100
160
40
-
-
40
30
5
-
-
-
100
MAX.
250
400
-
100
100
-
-
-
0.6
1.2
1
-
UNIT
-
nA
nA
V
V
V
V
V
V
MHz
Website: www.kingtronics.com Email: [e-mail] Tel: [phone] Fax: [phone]
1