MMBT8050 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBT8050
NPN Silicon Epitaxial Planar
Transistors
For switching and amplifier applications
As complementary types the PNP transistors
MMBT8550 is recommended.
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Ts
VALUE
40
25
6
600
350
150
- 55 to + 150
UNIT
V
V
V
mA
mW
℃
℃
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at VCE = 1 V, IC = 100 mA
MMBT8050D
at VCE = 1 V, IC = 500 mA
Collector Base Cutoff Current
at VCB = 35 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA
SYMBOL MIN. TYP. MAX. UNIT
MMBT8050C
hFE
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
f_T
100
250
160
-
400
-
40
-
-
-
100
nA
40
-
-
V
25
-
-
V
6
-
-
V
-
-
0.5
V
-
-
1.2
V
-
100
-
MHz
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