MMBT3906 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistor

MMBT3906
PNP Silicon General Purpose Transistors
For switching and amplifier applications
As complementary types the NPN transistors
MMBT3904 is recommended.
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at -VCE = 1 V, -IC = 0.1 mA
at -VCE = 1 V, -IC = 1 mA
at -VCE = 1 V, -IC = 10 mA
at -VCE = 1 V, -IC = 50 mA
at -VCE = 1 V, -IC = 100 mA
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 6 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
Base Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
Current Gain Bandwidth Product
at -VCE = 20 V, -IC = 10 mA, f = 100 MHz
Output Capacitance
at -VCB = 5 V, IE = 0, f = 1 MHz
Delay Time
at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA
Rise Time
at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA
Storage Time
at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA
Fall Time
at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA
SYMBOL
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Tstg
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
VALUE
40
40
6
200
350
150
- 55 to + 150
UNIT
V
V
V
mA
mW
℃
℃
SYMBOL
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
fT
Cobo
td
tr
ts
tf
MIN.
60
80
100
60
30
-
-
40
40
6
-
0.65
-
250
-
-
-
-
-
MAX.
-
-
300
-
-
50
50
-
-
-
0.25
0.4
0.85
0.95
-
4.5
35
35
225
75
UNIT
-
nA
nA
V
V
V
V
V
MHz
pF
ns
ns
ns
ns
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