MMBT3904 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

For switching and amplifier applications
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 100 mA
Collector Base Cutoff Current
at VCB = 30 V
Base Base Cutoff Current
at VEB = 6 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Current Gain Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector Output Capacitance
at VCB = 5 V, IE = 0, f = 1 MHz
Delay Time
at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA
Rise Time
at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA
Storage Time
at VCC = 3 V, IC = 10 mA, IB1 = - IB2 = 1 mA
Fall Time
at VCC = 3 V, IC = 10 mA, IB1 = - IB2 = 1 mA
MMBT3904
NPN Silicon General Purpose
Transistors
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
TJ
Tstg
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
VALUE
60
40
6
200
350
150
- 55 to + 150
UNIT
V
V
V
mA
mW
℃
℃
SYMBOL
hFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
f_T
Cob
td
t_r
ts
tf
MIN.
40
70
100
60
30
-
-
60
40
6
-
0.65
-
300
-
-
-
-
-
MAX.
-
-
300
-
-
50
50
-
-
-
0.2
0.3
0.85
0.95
-
4
35
35
200
50
UNIT
-
nA
nA
V
V
V
V
V
MHz
pF
ns
ns
ns
ns
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