BC856 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistors

BC856~BC859
PNP Silicon Epitaxial
Transistors
For switching and amplifier applications
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage
BC856
BC857
BC858, BC859
Collector Emitter Voltage
BC856
BC857
BC858, BC859
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
-VCBO
-VCEO
-VEBO
-IC
-ICM
Ptot
TJ
Tstg
Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at -VCE = 5 V, -IC = 2 mA
Current Gain Group A
B
C
Collector Base Cutoff Current
at -VCB = 30 V
Collector Base Breakdown Voltage
at -IC = 10 µA
BC856
BC857
BC858, BC859
Collector Emitter Breakdown Voltage
at -IC = 10 µA
BC856
BC857
BC858, BC859
Collector Emitter Breakdown Voltage
at -IC = 10 mA
BC856
BC857
BC858, BC859
Emitter Base Breakdown Voltage
at -IE = 1 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, - IB = 0.5 mA
at -IC = 100 mA, - IB = 5 mA
Base Emitter On Voltage
at -IC = 2 mA, - VCE = 5 V
at -IC = 10 mA, - VCE = 5 V
Current Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Noise Figure
at -IC = 200 µA, -VCE = 5 V,
RG = 2 KΩ, f = 1 KHz
at -IC = 200 µA, -VCE = 5 V,
RG = 2 KΩ, f = 30~15 KHz
BC856, BC857, BC858
BC859
BC859
SYMBOL
hFE
-ICBO
-V(BR)CBO
-V_(BR)CES
-V(BR)CEO
-V_(BR)EBO
-VCE(sat)
-VBE(sat)
fT
Cob
NF
VALUE
80
50
30
65
45
30
5
100
200
200
150
- 65 to + 150
UNIT
V
V
V
mA
mA
mW
℃
℃
MIN.
125
220
420
-
80
50
30
80
50
30
65
45
30
5
-
0.6
-
100
-
-
MAX.
220
475
800
15
-
-
-
-
0.3
0.65
0.75
0.82
-
6
10
4
4
UNIT
-
nA
V
V
V
V
V
V
MHz
pF
dB
Website: www.kingtronics.com Email: [e-mail] Tel: [phone] Fax: [phone]
1