BC817 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistor

BC817
NPN Silicon Epitaxial Planar
Transistors
For switching, AF driver and amplifier applications
These transistors are subdivided into three groups
-16, -25 and -40, according to their current gain.
As complementary types the PNP transistors BC807
and BC808 are recommended.
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
RØJA
TJ
TS
VALUE
50
45
5
500
200
500
150
- 55 to + 150
UNIT
V
V
V
mA
mW
K/W
℃
℃
Electrical Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group -16
-25
-40
at VCE = 1 V, IC = 500 mA
Collector Base Cutoff Current
at VCB = 20 V
Emitter-Base Cutoff Current
at VEB = 5 V
Collector Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base-Emitter Voltage
at IC = 500 mA, VCE = 1 V
Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 50 MHz
Collector-Base Capacitance
at VCB = 10 V, f = 1 MHz
SYMBOL MIN. TYP.
100
hFE
160
-
250
40
ICBO
-
-
IEBO
-
-
VCEsat
VBE(on)
ft
-
-
-
-
100
-
CCBO
-
5
MAX. UNIT
250
400
-
600
-
100 nA
100 nA
0.7
V
1.2
V
- MHz
-
pF
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