BC807 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistor

BC807
PNP Silicon Epitaxial Planar
Transistors
For switching, AF driver and amplifier applications
These transistors are subdivided into three groups
-16, -25 and -40, according to their current gain.
As complementary types the NPN transistors BC817
and BC818 are recommended.
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
SYMBOL
-VCBO
-VCEO
-VEBO
-IC
Ptot
RØJA
TJ
TS
VALUE
50
45
5
500
200
500
150
- 55 to + 150
UNIT
V
V
V
mA
mW
K/W
℃
℃
Electrical Characteristics at Ta = 25℃
PARAMETER
DC Current Gain
at -VCE = 1 V, - IC = 100 mA
Current Gain Group -16
-25
-40
at -VCE = 1 V, - IC = 500 mA
Collector Base Cutoff Current
at -VCB = 20 V
Emitter-Base Cutoff Current
at -VEB = 5 V
Collector Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base-Emitter Voltage
at -IC = 500 mA, -VCE = 1 V
Gain-Bandwidth Product
at -VCE = 5 V, - IC = 10 mA, f = 50 MHz
Collector-Base Capacitance
at -VCB = 10 V, f = 1 MHz
SYMBOL MIN. TYP.
hFE
-ICBO
100
160
-
250
40
-
-
-IEBO
-
-
-V_CEsat
-VBE(on)
-
-
-
-
ft
80
-
CCBO
-
9
MAX. UNIT
250
400
-
600
-
100 nA
100 nA
0.7
V
1.2
V
- MHz
-
pF
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