BAV70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

FEATURES
Small package
Low forward voltage
Fast reverse recovery time
Small total capacitance
APPLICATIONS
Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Non-repetitive Peak Forward Surge Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25℃
PARAMETER
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50mA
at IF = 150 mA
Reverse Current
at VR = 20 V
at VR = 75 V
at VR = 25 V, T_J = 150℃
at VR = 75 V, TJ = 150℃
Reverse Breakdown Voltage
Total Capacitance at VR = 0 , f = 1 MHz
Reverse Recovery Time
at IF = IR = 10 mA to Irr = 1mA, RL = 50 Ω
BAV70
Silicon Epitaxial Planar
Switching Diode
Marking Code: A4
SOT-23 Plastic Package
at t = 1 s
SYMBOL
VRM
VR
Io
IFM
IFSM
Pd
Tj
Tstg
VALUE
100
75
200
300
1
350
150
- 55 to + 150
UNIT
V
V
mA
mA
A
mW
℃
℃
SYMBOL MIN.
VF
-
MAX.
UNIT
715
mV
855
mV
1
V
1.25
V
IR
V(BR)R
CT
trr
25
nA
-
2.5
µA
30
µA
50
µA
75
-
V
-
2
pF
-
4
ns
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