L-51P3C Datasheet, PDF (2/2 Pages) Kingbright Corporation – Made with NPN silicon phototransistor chips

Absolute Maximum Rating at T)=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Power Dissipation at (or below) 25°C Free Air Temperature
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature(4mm For 5sec)
Maximum Ratings
30V
5V
100mW
-40°C ~ +85°C
-40°C ~ +85°C
260°C
Electrical And Radiant Characteristics at T)=25°C
Symbol
Parameter
Min.
V_{BR CEO}
Collector-to-Emitter Breakdown Voltage
30
V_{BR ECO}
Emitter-to-Collector Breakdown Voltage
5
V_{CE (SAT)} Collector-to-Emitter Saturation Voltage
-
I_CEO
Collector Dark Current
-
T_R
Rise Time (10% to 90%)
-
T_F
Fall Time (90% to 10%)
-
Typ.
-
-
-
-
3
3
Max.
-
-
0.8
100
-
-
Unit
Test Condiction
V
I _C=100uA
Ee=0mW/cm²
V
I _E=100uA
Ee=0mW/cm²
V
I _C=2mA
Ee=20mW/cm²
nA
V_CE=10V
Ee=0mW/cm²
us
V_CE=5V
I_C=1mA
RL=1KΩ
us
I _(ON)
On State Collector Current
V_CE=5V,
0.1
0.5
-
mA
Ee=1mW/cm²,
λ=940nm
SPEC NO: KDA0531
APPROVED:J.LU
REV NO: V.1
CHECKED:
DATE: SEP/17/2001
DRAWN:X.Q.ZHENG
PAGE: 2 OF 2