AO6601-HF Datasheet, PDF (5/7 Pages) Guangdong Kexin Industrial Co.,Ltd – Complementary Trench MOSFET

SMD Type
MOSFET
Complementary Trench MOSFET
AO6601-HF (KO6601-HF)
■ N-Channel Mosfet Typical Characterisitics
10
500
V_DS=15V
I_D=3.4A
8
400
6
300
C_iss
4
2
0
0
3
6
9
12
Q_g (nC)
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
R_DS(ON)
limited
0.1
T_J(Max)=150°C
DC
T_A=25°C
10µs
100µs
10ms
1ms
10s
0.0
0.01
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
1 R_θJA=150°C/W
200
C_oss
100
C_rss
0
0
5
10
15
20
25
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
1000
100
T_A=25°C
10
1
0.00001 0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
P_D
0.001
T_on
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1000
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