SI4953DY-HF Datasheet, PDF (4/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual P-Channel MOSFET

SMD Type
MOSFET
Dual P-Channel MOSFET
SI4953DY-HF (KI4953DY-HF)
■ Typical Characterisitics
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.75
10
0.60
T_J = 150 C
0.45
T_J = 25 C
0.30
I_D = 4.9 A
0.15
1
0.3
0.5
0.7
0.9
1.1
1.3
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.7
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power
50
0.5
40
I_D = 250 µA
0.3
30
0.1
20
- 0.1
- 0.3
- 50 - 25
.
0 25 50 75 100 125 150
T_J - Temperature ( C)
10
0
0.01
0.10
1.00
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
10.00
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5 C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
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