IRF7476 Datasheet, PDF (4/5 Pages) International Rectifier – Power MOSFET(Vdss=12V, Id=15A)

SMD Type
MOSFET
■ Typical Characterisitics
N-Channel MOSFET
IRF7476 (KRF7476)
1000
100
T_J = 150 ° C
10
T_J = 25 ° C
1
0.1
0.2
V _GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
15
12
9
6
3
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
V_DS
V_GS
R_G
R_D
D.U.T.
4.5V
Pulse Width 1 µs
Duty Factor 0.1 %
+_-VDD
Fig 10a. Switching Time Test Circuit
V_DS
90%
0
25
50
75
100
125 _.
150
T_c, Case Temperature (°C^° )
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 10b. Switching Time Waveforms
D = 0.50
10
0.20
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P _DM
t₁
t₂
0.1
0.0001
Fig 10.
Notes:
1. Duty factor D =
t₁/ t ₂
2. Peak T _J = P _DM x Z _thJA
+T _A
0.001
0.01
0.1
1
10
100
t ₁, Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
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