FDV303N-3 Datasheet, PDF (4/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFET
N-Channel MOSFET
FDV303N (KDV303N)
■ Typical Characterisitics
5
I_D = 0.5A
4
3
VDS = 5V
10V
15V
2
1
0
0
0.4
0.8
1.2
1.6
2
Q_g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
150
100
50
Ciss
20
f = 1 MHz
10 VGS = 0V
Coss
Crss
5
0.1
0.5
1
2
5
10
25
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
5
3
1
0.3
0.1
0.03
0.01
0.1
RDS(ON) ^LIMIT
V GS= 4.5V
SINGLE PULSE
R θJA =357°C/W
TA = 25°C
1ms
10ms
100ms
1s
10s
DC
0.2
0.5
1
2
5
10 20 40
V_DS , DRAI N-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
.
5
4
3
2
1
0
0.001
SINGLE PULSE
RθJA =357° C/W
TA = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t₁ , TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA = 357 °C/W
P(pk)
t_{1 t 2}
T_J - T_A = P * R _θJA(t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve.
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