AO3419-3 Datasheet, PDF (4/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
AO3419 (KO3419)
MOSFIECT
■ Typical Characterisitics
5
V_DS=-10V
4
I_D=-3.5A
3
2
600
450
C_iss
300
1
150
C_oss
0
0
1
2
3
4
5
Q_g (nC)
Figure 7: Gate-Charge Characteristics
100.0
10.0
R_DS(ON)
limited
10µs
100µs
1.0
1ms
10ms
0.1
DC
T_J(Max)=150°C
T_A=25°C
0.0
100ms
10s
0.01
0.1
1
10
100
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
C_rss
0
5
10
15
20
-V_DS (Volts)
Figure 8: Capacitance Characteristics
1000
100
T_J(Max)=150°C
T_A=25°C
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
R_θJA=125°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P_D
0.01
Single Pulse
T_on
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1000
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