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SI4463BDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET
SMD Type
MOSFET
P-Channel MOSFET
SI4463BDY (KI4463BDY)
■ Typical Characterisitics
Output Characteristics
50
50
V GS = 10 thru 2.5 V
40
40
Transfer Characteristics
30
2V
20
10
1.5 V
0
0
1
2
3
4
5
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
30
20
T C = 125 C
10
25 C
−55 C
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS − Gate-to-Source Voltage (V)
Capacitance
5000
0.03
0.02
0.01
V GS = 2.5 V
V GS = 4.5 V
V GS = 10 V
0.00
0
10
20
30
40
50
ID − Drain Current (A)
Gate Charge
5
V DS = 10 V
ID = 13.7 A
4
3
2
1
0
0 5 10 15 20 25 30 35 40
Qg − Total Gate Charge (nC)
4000
3000
C iss
2000
1000
0
0
C oss
C rss
4
8
12
16
20
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction T emperature
1.4
V GS = 10 V
1.3
ID = 13.7 A
1.2
1.1
1.0
0.9
0.8
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature ( C)
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