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| RB162M-60 Datasheet, PDF (3/4 Pages) Rohm – Schottky Barrier Diode | |||
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SMD Type
â Typical Characterisitics
100
80
60
Schottky Diodes
RB162M-60 (KB162M-60)
30
IFSM
1cyc
8.3ms
20
AVE:61.6A
40
10
20
AVE:11.6ns
Diodes
Tj=25°C
IF=0.1A
IR=0.1A
Irr=0.1*IR
n=10pcs
0
1000
100
IFSM DISPERSION MAP
IFSM
8.3ms 8.3ms
1cyc.
0
1000
100
trr DISPERSION MAP
IFSM
time
10
10
1
1
30
25
20
15
10
5
0
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
No break at 30kV
AVE:5.0kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
100
Rth(j-a)
On glass-epoxy substrate
soldering land
2mmÃ0.85mm
10
100
Rth(j-l)
1
0.1
0.001
Rth(j-a)
On glass-epoxy substrate
soldering land
6mmÃ6mm
0.01 0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
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