2SJ604-ZJ Datasheet, PDF (3/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
P-Channel MOSFET
2SJ604-ZJ
■ Typical Characterisitics
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60 _Pulsed
50
VGS = –4.0 V
–4.5 V
40
–10 V
30
20
10
0
50
0
ID = –23 A
50
100
150
Tch - Channel Temperature - ˚C
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1000
Pulsed
–100
VGS = –10 V
–10
–4.0 V
0V
–1
–0.1
0
–0.5
–1.0
–1.5
VSD - Source to Drain Voltage - V
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss
1000
Coss
100
Crss
10
–0.1
1000
VGS = 0 V
f = 1 MHz
–1
–10
–100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ s
VGS = 0 V
100
10
1
0.1
1
10
100
ID - Drain Current - A
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
VDD = –30 V
VGS = –10 V
RG = 0
tf
td(on)
tr
1
–0.1
–1
–10
–100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60
–12
ID = –45 A
–50
VDD = –48 V
–30 V
–40
–12 V
–10
VGS
–8
–30
–6
–20
–4
–10
0
0
–2
VDS
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
www.kexin.com.cn ³