ZXTP2013_15 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
ZXTP2013 (KXTP2013)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current RB ≤ 1kΩ
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter turn-on voltage
DC current gain
Switching times
Collector output capacitance
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= -100 μA， IE=0
-140
VCER IC=-1 A, RB ≤ 1kΩ
-140
V
VCEO Ic= -10 mA， IB=0
-100
VEBO IE= -100μA， IC=0
-7
VCB= -100 V , IE=0
-0.1
ICBO
VCB= -100 V , IE=0 , Ta = 100℃
-0.5
VCB= -100 V , IE=0
ICER
VCB= -100 V , IE=0 , Ta = 100℃
-0.1 uA
-0.5
IEBO VEB= -6V , IC=0
-0.1
IC=-100 mA, IB=-10mA
-30
IC=-1 A, IB=-100mA
VCE(sat)
IC=-2 A, IB=-200mA
-90
mV
-150
IC=-4 A, IB=-400mA
-340
VBE(sat) IC=-4 A, IB=-400mA
VBE(on) VCE= -2V, IC= -4 A
-1.1
V
-1.05
hFE(1) VCE= -1V, IC= -10mA
100
hFE(2) VCE=- 1V, IC= -1 A
100
300
hFE(3) VCE=- 1V, IC= -3 A
25
hFE(4) VCE=- 1V, IC= -4 A
15
hFE(5) VCE=- 1V, IC= -10 A
5
tON _{IC=-1A, VCC=-10V,}
tOFF ^{IB1=IB2=-100mA}
42
ns
540
Cob VCB= -10V, IE=0,f=1MHz
42
pF
fT
VCE= -10V, IC= -100mA,f=50MHz
125
MHz
■ Marking
Marking
ZXTP
2013
2 _{www.kexin.com.cn}