SI9926BDY-HF Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel MOSFET

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Dual N-Channel MOSFET
SI9926BDY-HF (KI9926BDY-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate-Body Leakage
Drain-Source On-State Resistance *
On-State Drain Current *
Forward Transconductance *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Maximum Continuous Drain-Source Diode
Forward Current
Diode Forward Voltage *
Symbol
Test conditions
VDSS VGS = 0 V, ID = 250 μA
IDSS VDS = 20V , VGS = 0V
VGS(th) VDS = VGS , ID = 250uA
IGSS VDS = 0V , VGS = ±8V
VGS = 4.5V , ID = 8.5A
RDS(on)
VGS = 2.5V , ID = 3.3A
ID(on) VDS = 5V , VGS = 4.5V
gfs VDS = 15V , ID =8.2A
Qg
Qgs VDS = 10V , VGS = 4.5V , ID = 8.2A
Qgd
td(on)
tr
td(off)
VDD = 10V, ID = 1A ,
VGS = 4.5V , RG = 6Ω,RL = 10 Ω
tf
IS
VSD IS = 1.7A, VGS = 0 V
* Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
MOSFET
Min Typ Max Unit
20
V
1 μA
0.5
1.5 V
±100 nA
0.027
Ω
0.036
30
A
29
S
11 20
2.5
nC
3.2
36 57
52 78
ns
32 50
15 25
0.95 A
0.8 1.2 V
■ Marking
Marking
9926B
KA**** F
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