SI7129DN Datasheet, PDF (2/8 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
SI7129DN (KI7129DN)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note.1)
On state drain current (Note.1)
Forward Transconductance (Note.1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Test Conditions
ID=-250μA, VGS=0V
VDS=-30V, VGS=0V
VDS=-30V, VGS=0V, TJ=55℃
VDS=0V, VGS=±20V
VDS=VGS ID=-250μA
VGS=-10V, ID=-14.4A
VGS=-4.5V, ID=-11.5A
VGS=-10V, VDS=-5V
VDS=-15V, ID=-14.4A
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-14.4A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Maximum Body-Diode Continuous Current
Pulse Diode Forward Currenta (Note.1)
Diode Forward Voltage
Qgs
Qgd
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
trr
Qrr
ta
tb
IS
ISM
VSD
VGS=-4.5V, VDS=-15V, ID=-14.4A
VGS=-4.5V, VDS=-15V, RL=1.5Ω,
RG=1Ω,ID=-10A
VGS=-10V, VDS=-15V, RL=1.5Ω,
RG=1Ω,ID=-10A
IF=-10A, dI/dt=100A/μs,TJ=25℃
Tc=25℃
IF=-10A
Note.1: Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
MOSFET
Min Typ Max Unit
-30
V
-1
μA
-10
±100 nA
-1.5
-2.8 V
9.5 11.4
mΩ
16 20
-20
A
37
S
2230 3345
385 578 pF
322
0.4 1.8 3.6 Ω
47.5 71
24.6 37
nC
7.7
12
50 75
43 65
30 45
14 21
14 21 ns
9 18
36 54
10 20
34 47
30 45 nC
15
ns
16
-35
A
-60
-0.8 -1.2 V
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